ds30099 rev. 8 - 2 1 of 3 2n7002w www.diodes.com diodes incorporated 2n7002w n-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed low input/output leakage ultra-small surface mount package available in lead free/rohs compliant version (note 2) maximum ratings @ t a = 25c unless otherwise specified characteristic symbol 2n7002w units drain-source voltage v dss 60 v drain-gate voltage r gs 1.0m v dgr 60 v gate-source voltage continuous pulsed v gss 20 40 v drain current (note 1) continuous continuous @ 100c pulsed i d 115 73 800 ma total power dissipation (note 1) derating above t a = 25c p d 200 1.60 mw mw/c thermal resistance, junction to ambient r ja 625 k/w operating and storage temperature range t j ,t stg -55 to +150 c a m j l e d b c h k g g s d mechanical data case: sot-323 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 terminal connections: see diagram marking (see page 2): k72 ordering & date code information: see page 2 weight: 0.006 grams (approx.) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm note: 1. device mounted on fr-5 pcb 1.0 x 0.75 x 0.062 inch pad layout as shown on diodes, inc. suggested pad layout ap02001 , which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. source gate d ra i n
ds30099 rev. 8 - 2 2 of 3 2n7002w www.diodes.com electrical chacteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 3) drain-source breakdown voltage bv dss 60 70 v v gs = 0v, i d = 10 a zero gate voltage drain current @ t c = 25c @ t c = 125c i dss 1.0 500 a v ds = 60v, v gs = 0v gate-body leakage i gss 10 na v gs = 20v, v ds = 0v on characteristics (note 3) gate threshold voltage v gs(th) 1.0 2.0 v v ds = v gs , i d = 250 a static drain-source on-resistance @ t j = 25c @t j = 125c r ds (on) 1.8 2.6 7.5 13.5 v gs = 5.0v, i d = 0.05a v gs = 10v, i d = 0.5a on-state drain current i d(on) 0.5 1.0 a v gs = 10v, v ds = 7.5v forward transconductance g fs 80 ms v ds =10v, i d = 0.2a dynamic characteristics input capacitance c iss 22 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss 11 25 pf reverse transfer capacitance c rss 2.0 5.0 pf switching characteristics turn-on delay time t d(on) 7.0 20 ns v dd = 30v, i d = 0.2a, r l = 150 ,v gen = 10v, r gen = 25 turn-off delay time t d(off) 11 20 ns ordering information (note 4) device packaging shipping 2n7002w-7 sot-323 3000/tape & reel notes: 3. short duration test pulse used to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: 2n7002w-7-f. marking information k72 ym k72 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30099 rev. 8 - 2 3 of 3 2n7002w www.diodes.com 0 0.2 0.4 0.6 0.8 1 . 0 01 2 3 4 5 v , drain-source voltage (v) ds fi g . 1 on-re g ion characteristics v = 10v gs 9.0v 8.0v 7.0v 6.5v 6.0v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v 2.0/1.0v 5.5v 5.0v i , drain-source current (a) d 0 1 2 3 4 5 00.2 r,n o rmalized ds(on) drain-source on-resistance i , drain current (a) d fig. 2 on-resistance vs drain current v=5.0v gs t=25 c j v = 10v gs 6 7 0.4 0.6 0.8 1.0 0.0 0.5 1.0 2.5 2.0 1.5 3.5 3.0 -55 -30 -5 20 45 70 95 120 145 170 r,n o rmalized ds(on) drain-source on-resistance t , junction temperature ( c) j fig. 3 on-resistance vs junction temperature v = 10v, i = 0.5a gs d t = 25c j pulse width: 380us v = 5.0v, i = 0.05a gs d 0 v , gate to source voltage (v) gs fig. 4 on-resistance vs. gate-source voltage i = 50ma d i = 500ma d 1 2 3 4 5 6 0 2 4 6 8 1012141618 r,n o rmalized ds(on) drain-source on-resistance
|
